An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy

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An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy

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Andrews, David Arthur (1987) An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy. Doctoral thesis, City of London Polytechnic.

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Abstract

An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply programmed by an applied emf. The response time of the cell is of the order of one second enabling complicated doping profiles to be achieved.

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