Andrews, David Arthur (1987) An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy. Doctoral thesis, City of London Polytechnic.
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Abstract / Description
An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply programmed by an applied emf. The response time of the cell is of the order of one second enabling complicated doping profiles to be achieved.
Item Type: | Thesis (Doctoral) |
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Additional Information: | uk.bl.ethos.376964 |
Subjects: | 500 Natural Sciences and Mathematics > 530 Physics |
Department: | School of Computing and Digital Media |
Depositing User: | Mary Burslem |
Date Deposited: | 18 Sep 2018 11:57 |
Last Modified: | 18 Sep 2018 11:57 |
URI: | https://repository.londonmet.ac.uk/id/eprint/3129 |
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