Theory and experiment for silicon Schottky barrier diodes at high current density

Brinson, Mike, Wilkinson, J. M. and Wilcock, J. D. (1977) Theory and experiment for silicon Schottky barrier diodes at high current density. Solid State Electronics, 20 (1). pp. 45-50. ISSN 0038-1101

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Abstract / Description

Metal-silicon Schottky barrier diodes exhibit n values which theoretically vary as a function of doping and applied voltage. The expected variation depends on which theoretical model is used to describe the current transport.

Titanium n-type silicon barriers were prepared. At a doping level of 3 × 1015 cm−3 the barrier height and n-value measured at 100 mV were 0.485±0.005 V and 1.02±0.01 whereas for a doping level of 2 × 1014 cm−3 the corresponding values were 0.500±0.005 V and 1.18±0.05.

The experimental variation of the diode n value as a function of semiconductor band bending showed good agreement with the thermionic-diffusion model of Crowell and Beguwala: n values increased rapidly as the band bending β → 2, and n values were highest at a given β for diodes with the lowest doping concentration. Similar results were obtained by measurements on magnesium and aluminium barriers on n-type silicon.

An analysis of the results has shown that the variation of the diode saturation current Is follows the predictions of the thermionic-diffusion theory, although there were some anomalies at high current densities. The anomalies did not result from variation of the width of the undepleted region of the epitaxial silicon layer or from diode self-heating effects.

Item Type: Article
Uncontrolled Keywords: metal-silicon Schottky barrier diodes
Subjects: 600 Technology > 620 Engineering & allied operations
Department: School of Computing and Digital Media
Depositing User: Mike Brinson
Date Deposited: 04 Nov 2019 11:54
Last Modified: 04 Nov 2019 11:54


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