Thermal conductivity and thermoelectric power of heavily doped n-type silicon

Brinson, Mike and Dunstan, W. (1970) Thermal conductivity and thermoelectric power of heavily doped n-type silicon. Journal of Physics C: Solid State Physics, 3 (3). pp. 483-491. ISSN 0022-3719

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Abstract / Description

Experimental values are given of the thermal conductivity and thermoelectric power of n-type silicon doped with phosphorus, antimony or arsenic, containing 4*1019 to 6*1025 m-3 electrons at room temperature, covering the range 4-300 degrees K. A theoretical treatment, using the variational method, suggests that the ratio of phonon drag component of thermoelectric power to thermal conductivity should be independent of carrier concentration, if the latter is not too large. This is verified experimentally; the temperature variation of the ratio is in satisfactory agreement with theory, which also gives the correct order of magnitude for the absolute value.

Item Type:	Article
Uncontrolled Keywords:	n-type silicon; thermal conductivity; thermoelectric power
Subjects:	500 Natural Sciences and Mathematics > 540 Chemistry & allied sciences 600 Technology > 620 Engineering & allied operations
Department:	School of Computing and Digital Media
Depositing User:	Mike Brinson
Date Deposited:	04 Nov 2019 11:47
Last Modified:	04 Nov 2019 11:47
URI:	https://repository.londonmet.ac.uk/id/eprint/5273

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