On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy

Newstead, Simon Marc (1987) On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy. Doctoral thesis, City of London Polytechnic.

Abstract

Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).

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