On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy

Newstead, Simon Marc (1987) On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy. Doctoral thesis, City of London Polytechnic.

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Abstract / Description

Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).

Item Type:	Thesis (Doctoral)
Additional Information:	uk.bl.ethos.380790
Uncontrolled Keywords:	Semiconductor lattice study
Subjects:	500 Natural Sciences and Mathematics > 530 Physics
Department:	School of Human Sciences
Depositing User:	Mary Burslem
Date Deposited:	13 Sep 2018 14:25
Last Modified:	13 Sep 2018 14:25
URI:	https://repository.londonmet.ac.uk/id/eprint/3065

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