Newstead, Simon Marc (1987) On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy. Doctoral thesis, City of London Polytechnic.
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Abstract / Description
Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).
Item Type: | Thesis (Doctoral) |
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Additional Information: | uk.bl.ethos.380790 |
Uncontrolled Keywords: | Semiconductor lattice study |
Subjects: | 500 Natural Sciences and Mathematics > 530 Physics |
Department: | School of Human Sciences |
Depositing User: | Mary Burslem |
Date Deposited: | 13 Sep 2018 14:25 |
Last Modified: | 13 Sep 2018 14:25 |
URI: | https://repository.londonmet.ac.uk/id/eprint/3065 |
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