On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy

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On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy

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Newstead, Simon Marc (1987) On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy. Doctoral thesis, City of London Polytechnic.

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Abstract

Si and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).

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